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论文摘要

低能量半导体激光在促进颌面部骨折手术伤口愈合中的临床研究

Clinical study on low-energy semiconductor laser treatment in the promotion of wound healing after maxillofacial fracture surgery

作者:熊茂婧, 杨露, 马丽源, 刘磊, 杨波

Author:Xiong Maojing, Yang Lu, Ma Liyuan, Liu Lei, Yang Bo

收稿日期:2024-06-21          年卷(期)页码:2025,43(1):68-68-75

期刊名称:华西口腔医学杂志

Journal Name:West China Journal of Stomatology

关键字:半导体激光,颌面部骨折,疼痛,伤口愈合,瘢痕,

Key words:semiconductor laser,maxillofacial fracture,pain,wound healing,scar,

基金项目:四川省卫生健康委员会科技项目(24YWYL02)

中文摘要

目的 评价低能量半导体激光在促进颌面部骨折手术伤口愈合中的临床效果。 方法 采用前瞻性随机对照研究,选取2021年8月—2023年6月在四川大学华西口腔医院创伤整形外科住院治疗的颌面部骨折患者为研究对象,随机分为试验组和对照组。试验组于术后第1天开始在每日常规换药后使用低能量半导体激光治疗仪进行面部皮肤伤口治疗,每日1次,连续治疗6 d;对照组仅进行常规换药处理,不使用低能量半导体激光治疗。比较2组患者伤口愈合时间、伤口愈合情况、修正Stony Brook瘢痕评定量表(mSBSES)评分、疼痛指数和伤口感染率的差异。 结果 本研究共纳入患者211例,其中试验组104例,对照组107例;男128例,女83例。试验组在低能量半导体激光治疗后,面部皮肤伤口愈合时间较对照组明显缩短(P<0.05),且试验组在术后第7天的伤口甲级愈合率高于对照组(P<0.05)。术后伤口评价指标中,试验组在各观察点的mSBSES评分均高于对照组(P<0.05),且试验组较对照组在伤口宽度、高度、颜色和切口线等指标的评分更高,差异有统计学意义(P<0.05)。术后伤口疼痛评价方面,试验组在经过低能量半导体激光治疗后疼痛指数较对照组明显降低(P<0.05)。2组伤口感染率差异比较无统计学意义(P>0.05)。 结论 对于颌面部骨折手术面部皮肤伤口,低能量半导体激光治疗能够有效促进伤口愈合,提升伤口愈合质量,淡化瘢痕,缓解疼痛。

英文摘要

ObjectiveThis study aims to evaluate the clinical effect of low-energy semiconductor laser treatment on the promotion of wound healing after maxillofacial fracture surgery.MethodsA prospective randomized controlled study was conducted. Patients with maxillofacial fractures who were hospitalized in the Department of Trauma and Plastic Surgery, West China Hospital of Stomatology, Sichuan University, from August 2021 to June 2023 were selected as the study subjects and randomly divided into experimental and control groups. The experimental group was treated with a low-energy semiconductor laser once a day for six consecutive days after daily routine dressing change on the first day after surgery. The control group only underwent routine dressing change treatment and did not receive low-energy semiconductor laser treatment. Wound healing times, wound healing conditions, modified Stony Brook scar evaluation scale (mSBSES) scores, pain indices, and wound infection rates were compared between the two groups.ResultsA total of 211 patients were included in this study. A total of 104 and 107 cases comprised the experimental and control groups, respectively. A total of 128 males and 83 females were included. After low-energy semiconductor laser treatment, the facial skin wound healing time of the experimental group was found to be significantly shorter than that of the control group (P<0 .05). moreover, the wound grade a healing rate of the experimental group was higher than that of the control group on the seventh day after surgery (P<0 .05). among postoperative facial skin wound evaluation indices, the msbses scores of the experimental group at all observation points were higher than those of the control group (P<0 .05), and the scores of the experimental group were higher than those of the control group in terms of wound width reduction, height reduction, color lightening, and incision line loss (P<0 .05). in postoperative wound pain evaluation, the pain index of the experimental group after low-energy semiconductor laser treatment was significantly lower than that of the control group (P<0 .05). no significant difference in wound infection rates was found between the two groups (P>0.05).ConclusionFor facial skin wounds in maxillofacial fracture surgery, low-energy semiconductor laser treatment can effectively promote wound healing, improve wound healing quality, fade scars, and relieve wound pain.

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