In the electronics industry it is desirable to employ materials which allow for low-voltage operation and device designs based on very thin layers. In addition, these materials are supposed to be applicable in an easy, fast and reliable way. In this paper, we report an optimized procedure to deposit thin zirconium dioxide (ZrO2) high-k dielectric layers in an easy, reliable and very quickly applicable way. The processing time was only 10 minutes as compared to previously reported 140 min. with a similar approach. This optimization included also simplifications of processing procedure. For this particular sol-gel method, a reduction of the film thickness of the dielectric layer compared to previously reported films by a factor of 4 was achieved. These processing and thickness improvements were obtained while all required dielectric properties of ZrO2 were preserved. In addition, a thorough temperature dependence study is presented showing that the dielectric properties change by less than 10 % between 90 and 300 K.
