氦离子行为与钨中相关缺陷演化的研究
Study on the behaviour of helium and the evolution of the related defect in tungsten
作者：王勇(四川大学物理科学与技术学院)；吴双(西南民族大学电气信息工程学院)；邓爱红(四川大学物理科学与技术学院)；王康(四川大学物理科学与技术学院)；王玲(四川大学原子核科学技术研究所, 辐射物理与技术教育部重点实验室)；卢晓波(四川大学物理科学与技术学院)；张元元(四川大学物理科学与技术学院)
Author：WANG Yong(College of Physical and Technology, Sichuan University)；WU Shuang(School of Electrical and Information Engineering, Southwest University for Nationalities)；DENG Ai-Hong(College of Physical and Technology, Sichuan University)；WANG Kang(College of Physical and Technology, Sichuan University)；WANG Ling(Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University)；LU Xiao-Bo(College of Physical and Technology, Sichuan University)；ZHANG Yuan-Yuan(College of Physical and Technology, Sichuan University)
收稿日期：2016-03-30 年卷（期）页码：2016,53(6):1345-1348
期刊名称：四川大学学报: 自然科学版
Journal Name：Journal of Sichuan University (Natural Science Edition)
关键字：钨 离子注入 氦 空位型缺陷 慢正电子束分析
Key words：Ion implantation; Helium; Vacancy-type defect; Slow positron beam analysis
基金项目：国家自然科学基金 （批准号：11275132）
中文摘要
摘 要:采本文通过离子注入向钨体中注入100 keV 氦离子，并使用慢正电子束分析（SPBA）手段研究了不同注量的氦在钨体内的行为以及氦相关缺陷的演化。实验结果表明：在不同的氦注量条件下，样品的S-W参数呈相同线性分布显示氦离子的注入会引入同一类型的空位型缺陷, 并且随着氦离子注量增加，S参数的增大表明引入空位型缺陷浓度的逐渐增加。通过与其他未退火样品对比发现样品退火后的S参数出现明显改变，该结果表明相对于其他影响因素如注量，钨中空位型缺陷更容易受热效应的影响。
英文摘要
Abstract: In this paper, the 100 keV helium ions were implanted in tungsten. The behaviour of helium and the evolution of the related defect have also been studied as a function of helium fluence by slow positron beam analysis (SPBA). The experimental results indicated that helium ions irradiation under different helium fluence introduced the same vacancy-type defects on the basis of the phenomenon that the S-W date present the same linear distribution. Moreover, with the increment of helium fluence, the concentration of vacancy-type defects in the samples increased correspondingly. It was also found that the S parameter of the sample annealed had a significant change by comparing with other samples without annealing. The result suggested that vacancy-type defects were more likely to be affected by thermal treatment than other influencing factors such as fluence.
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