High-quality microcrystalline silicon films with improved stability were prepared by plasma enhanced chemical vapour deposition technique from SiCl4/H2 under 250℃, at a higher rate over 0.28nm/s, with a crystalline fraction of 80%. The photoconductivity of the microcrystalline silicon films keeps a constance after 540min long light soaking. The thickness uniformity of films was markedly improved (more than 95%) by altering the distribution of pore.
