Microcrystalline silicon films were deposited, using H2 diluted SiCl4 gaseous mixture, by plasma enhanced chemical vapor deposition (PECVD) technology under different discharge powers. The crystallization control and optimization of photoelectric properties of microcrystalline silicon thin films were realized by adjusting the discharge power. Morever, the electronic properties and the neutral radicals of the plasma space were detected online by the Langmuir probe and the mass spectrometer, respectively. The microscopic mechanism of film formation was also discussed preliminarily.
