退火温度对钨中He相关缺陷演化影响的研究
Study on the effects of the evolution of helium-related defects in tungsten under different annealing temperatures
作者：卢晓波(四川大学物理科学与技术学院)； 刘莉(西南民族大学计算机科学与技术学院)； 郑明秀(西南民族大学计算机科学与技术学院)； 王康(四川大学物理科学与技术学院)；张元元(四川大学物理科学与技术学院)；邓爱红(四川大学物理科学与技术学院)
Author：LU Xiao-Bo(College of Physical Science and Technology, Sichuan University)；LIU Li(College of Computer Science and Technology, Southwest University for Nationalities)；ZHENG Ming-Xiu(College of Computer Science and Technology, Southwest University for Nationalities)；WANG Kang(College of Physical Science and Technology, Sichuan University)；ZHANG Yuan-Yuan(College of Physical Science and Technology, Sichuan University)；DENG Ai-Hong(College of Physical Science and Technology, Sichuan University)
收稿日期：2016-12-23 年卷（期）页码：2018,55(3):605-608
期刊名称：四川大学学报: 自然科学版
Journal Name：Journal of Sichuan University (Natural Science Edition)
关键字：钨，氦，离子注入，空位型缺陷，慢正电子束
Key words：Tungsten, Helium, Ion implantation, Vacancy-type defect, Slow Positron Beam Analysis
基金项目：国家自然科学基金（11275132, 11675114）
中文摘要
本文通过离子注入向钨体中注入能量为100 keV 氦离子，并利用X射线衍射（XRD）以及慢正电子束分析（SPBA）手段研究了不同退火温度下氦在钨体中的行为以及相关缺陷的演化。实验结果表明：低温退火并未改变相关缺陷的类型，样品S参数的下降表明低温退火导致了缺陷浓度的降低；当退火温度达到700℃时，样品S-W参数线性分布的变化表明缺陷类型逐渐发生改变；随着退火温度的进一步升高，He相关缺陷的演化程度加剧并向更深处迁移。
英文摘要
In this paper, the helium ions with the energy of 100 keV were implanted into tungsten. The behavior of helium and evolution of the related defect under different annealing temperatures were studied by XRD and slow positron beam analysis (SPBA). The results showed that the defect type is not changed at lower annealing temperature, and the decline of S parameter manifested that the lower temperature annealing led the decrease of defect concentration. As the annealing temperature approaching to 700℃，the change of the linear distribution of S-W parameter indicated that the type of defect has been altered. While the further increment of annealing temperature, the evolution of helium-related defects is aggravated, and these defects migrate to deeper region in the tungsten samples.
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