W-doped BiVO4 photoanode was obtained through drop-casting method. The physical and photophysical properties of the BiVO4 photoanode were investigated by X-ray diffraction (XRD), UV-vis absorption spectroscopy and scanning electron microscopy (SEM). Photo-electrochemical performance was evaluated for the W-doped BiVO4 photoanode. In terms of maximizing the photoelectrochemical performances of the W-doped BiVO4 photoanodes, the synthsis conditions were optimized. The W-doped BiVO4 photoanode exhibits improved photoelectrochemical performance after the electrochemical surface pretreatment. The photoelctrochemical response of BiVO4 photoanode can be improved by both tungsten doping and the electrochemical surface pretreatment. A possible mechanism was also proposed to explain the reason for the photocurrent enhancement.
