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论文摘要

电子受体强度对基于Thieno[3,2-b]thiophene的共轭聚合物电子性质的影响

The effects of electron-acceptor strength on the electronic properties of thieno[3,2-b]thiophene-based donor–acceptor copolymers

作者:傅杨武(重庆三峡学院);陈明君(重庆三峡学院);周胡来(重庆三峡学院);张洁(重庆三峡学院);冉娟(重庆三峡学院)

Author:FU Yang-Wu(Chongqing Three Gorges Universty);CHEN Ming-Jun(Chongqing Three Gorges University);ZHOU Hu-Lai(Chongqing Three Gorges University);ZHANG Jie(Chongqing Three Gorges University);RAN Juan(Chongqing Three Gorges University)

收稿日期:2018-02-27          年卷(期)页码:2018,55(6):1275-1281

期刊名称:四川大学学报: 自然科学版

Journal Name:Journal of Sichuan University (Natural Science Edition)

关键字:噻吩并[3,2-b]噻吩;电子受体强度;电子结构与性质

Key words:Thieno[3,2-b]thiophene; Electron-acceptor strength; Electronic structures and properties

基金项目:国家自然科学基金(21073144)

中文摘要

采用杂化的密度泛函方法(DFT/B3LYP),在6-31G(d)理论水平下研究了基于噻吩并[3,2-b]噻吩(Thieno[3,2-b]thiophene,TT))的D-A型共轭聚合物的几何结构、电子结构和性质. 研究发现,在以TT为电子供体的D-A型共轭聚合物中,电子受体强度是影响其几何结构、电子结构和性质的重要因素. 对基于TT的电子受体与电子供体交替排列的D-A型共轭聚合物,在一定范围内,电子受体强度增加,有利于减小共轭聚合物的键长交替,降低聚合物的能隙,并使其能带变宽,电子离域程度增大,载流子有效质量减小,载流子迁移能力增强. 但受体强度过大,键长交替反而增大,能带和能隙均变窄,载流子迁移能力减弱.

英文摘要

The donor-acceptor(D-A) conjugated copolymer were designed by choosing Thieno[3,2-b]thiophene(TT) as the electron donor and quinoxaline(Q), Benzo[c][1,2,5]thiadiazole(BT), pyrazino[2,3-g]quinoxaline(PQ), [1,2,5]thiadiazolo[3,4-g]quinoxaline (TQ) or Benzobis[1,2,5]thiadiazole (BBT) as the electron acceptor unit. The DFT/B3LYP method is employed to investigate the electronic structures and properties of the donor-acceptor alternating copolymers. The theoretical results suggest that electron-acceptor strength contribute significantly to the geometrical structures and electronic properties of the alternating donor-acceptor copolymers. The geometrical and electronic properties of the TT-based copolymers exhibit a systematic trend with the electron-acceptor strength within a certain range. The bond length alternation, band gap (Eg) and hole effective mass decrease, the bandwidth (both valence and conduction band) increases systematically with an increase in the electron-withdrawing ability of the acceptor moiety within a certain range of the electron-acceptor strength.

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