The current of Schottky barrier metal-oxide-semiconductor field-effect transistor (MOSFET) is popularly calculated through the integration of Fermi-Dirac distribution for carrier over energy or self consistent iterative numerical calculation. In order to reduce the calculation complexity, this paper presents a new analytical drain current model for surrounding-gate Schottky barrier MOSFET through adopting several fitting parameters which takes into account for the impact on the Schottky barrier height of image force barrier lowering effect, dipole barrier lowering effect and quantum effect at smaller size. The proposed drain current model is in good agreement with the reported experimental data in the literature, which verifies the correctness of the model and can provide some reference for the design of surrounding-gate Schottky barrier MOSFET device and circuit.
