This article proposes a novel concept for constructing a microwave (MW) rectifying circuit by using a multilayer structure, aiming at reducing physical dimensions. Specifically, conductor layers in the multilayer structure are interconnected with an embedded via-hole. Then, an S-band rectifying circuit based on HSMS-282C Schottky diode is fabricated with the proposed multilayer structure for demonstration. The maximum MW-DC conversion efficiency of 73% has been measured. In comparison with the conventional microstrip rectifying circuit, the proposed multilayer circuit shows a great reduction of physical dimensions and a very similar efficiency, which validates that the proposed circuit can reduce physical dimensions significantly without sacrificing the MW-DC conversion efficiency.
