This paper presents the results of X ray diffraction spectra (XRD), atomic force microscopy (AFM) and positron annihilation Doppler broadening spectroscopy (PADB) measurements on the undoped and Te doped GaSb grown on the GaAs substrate by molecular beam epitaxy(MBE) under the same conditions. The structures and defect properties in the above nano materials have been described. The study shows that the defects of film doped with Te decrease. This result will be helpful to the epitaxial growth. Finally, the mechanism of defects is analyzed.
