In order to describe the bias dependence of nanometer MOSFET from the strong inversion to weak inversion regimes under millimeter wave band, the modeling of the high frequency equivalent circuit of MOSFET and its technology of parameter extraction were studied. A simple and accurate method for obtaining the parameters of the small signal model was proposed. Based on the physical structure of device of 45 nm MOSFET, a millimeter wave equivalent circuit model of MOSFET suitable for parameter extraction was described by taking into account the intrinsic physical characteristics of the devices, the electromagnetic characteristics of the pin and the parasitic characteristics of the test pad and test interconnects. By analyzing the two port network parameters of the presented millimeter wave small signal equivalent circuit of 45 nm MOSFET, the first order simplified mathematical model of admittance (Y) parameter of quasi-static approximate millimeter wave equivalent circuit was developed. Then, the proposedYparameter model was applied to extract the component of equivalent circuit of nanometer MOSFET in order to offer the excellent continuity and smoothness of the extracted results under different bias conditions. Using the radio frequency multi-finger NMOSFET with the number of fingersNf=10, the gate widthW=2 μm and the gate lengthL=45 nm, the simulation accuracy of the presentedYparameter model from 1 to 50 GHz was verified under different bias points. The experimental results also showed the bias dependence of 45 nm MOSFET. The practicability and accuracy of proposed model and the parameters extract algorithm derived from it were also verified by the consistency comparison of the simulated results by using ADS2013 tool and the measured data. Therefore, the proposedYparameter model can be transplanted to the automatic simulation design tool easily and accurately. The different characterizations of monotonic features of the intrinsic element parameters of the equivalent circuits is of great significance to the optimization design of the millimeter wave integrated circuit from the strong inversion to weak inversion regime.
