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论文摘要

HPTiO2忆阻线性和非线性模型及其特征分析

LinearandNonlinearModelsofHPTiO<sub>2</sub>MemristorandTheirPrintfingerAnalyses

作者:包伯成(常州大学 信息科学与工程学院);武花干(南京理工大学 电子工程系);乔晓华(江苏理工学院 电气信息工程学院);胡丰伟(常州大学 信息科学与工程学院)

Author:Bao Bocheng(SchoolofInfo.Sci.andEng.,ChangzhouUniv.);Wu Huagan(Dept.ofElectricEng.,NanjingUniv.ofSci.andTechnol.);Qiao Xiaohua(SchoolofElectricalandInfo.Eng.,JiangsuUniv.ofTechnol.);Hu Fengwei(SchoolofInfo.Sci.andEng.,ChangzhouUniv.)

收稿日期:2014-01-10          年卷(期)页码:2014,46(4):134-140

期刊名称:工程科学与技术

Journal Name:Advanced Engineering Sciences

关键字:忆阻模型;窗函数;特征;初始状态

Key words:memristormodel;windowfunction;printfinger;initialstate

基金项目:国家自然科学基金资助项目(51277017);江苏省自然科学基金资助项目(BK2012583)

中文摘要

为了分析HPTiO2忆阻模型的本质特征,比较基本模型与非线性窗函数模型之间本质特征的差异,概述了几种典型的HPTiO2忆阻非线性窗函数模型的特点,开展了HPTiO2忆阻基本模型的本质特征分析,并对几种非线性窗函数模型的本质特征进行了比较。结果表明,对于任意忆阻初始状态和任意振幅与频率的正弦电流激励,HPTiO2忆阻模型都能呈现出紧磁滞回线特征;不同的非线性窗函数模型的特征受其非线性漂移的影响,所产生的输出电压和忆阻值有着不同的瞬态过渡过程,且忆阻初始状态值越大,非线性漂移影响就越严重,导致部分HPTiO2忆阻模型性能失效。

英文摘要

To analyze the printfingers of HP TiO2memristor model and compare the differences between the printfingers of the basic model and nonlinear window function models, the features of several typical HP TiO2memristor nonlinear window function models were summarized and a unified model of HP TiO2memristor was proposed. The printfinger analysis of HP TiO2memristor basic model was further developed and the printfinger comparisons of several nonlinear window function models were then performed. The results demonstrated that all HP TiO2memristor models can exhibit hysteresis loops pinched at the origin for any memristor initial state and any amplitude and frequency of the sinusoidal current stimulus. The printfingers of different nonlinear window function models are effected by the corresponding nonlinear drifts, which result in that the generated output voltages and memristances have different transient transition processes, and the effects of the nonlinear drifts become more serious with the increasing memristor initial state values, causing the performances failure of a part of HP TiO2memristor models.

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