The transformation of preparation temperature field of large area CdTe films was simulated, and the effect of temperature field’s uniformity on CdS/CdTe solar cells was investigated by the characteration of I-V、C-V and Deep Level Transient Spectroscopy(DLTS). The result showed that the uniformity of temperature field has effect on Isc and FF, but lacks impact on Voc. Least dark saturated current density、more higher carrier concentration and better photovoltaic performance were observed in the sample prepared at 580 ℃; The response of deep-level impurities in CdTe films is consistent with temperature and frequency, but the sample(580 ℃) has less deep-level impurities’ recombination because of lower hole trap concentration. 8.2% efficiency of the CdS/CdTe solar cells was reached by improved the uniformity of temperature field.
